vestiftИзвестия Национальной академии наук Беларуси. Серия физико-технических наукProceedings of the National Academy of Sciences of Belarus. Physical-technical series1561-83582524-244XThe Republican Unitary Enterprise Publishing House "Belaruskaya Navuka"10.29235/1561-8358-2021-66-2-227-233vestift-671Research ArticleРАДИОЭЛЕКТРОНИКА И ПРИБОРОСТРОЕНИЕRADIOELECTRONICS AND INSTRUMENT-MAKINGКалибровочные коэффициенты для определения концентрации вакансионно-кислородных комплексов и кислородного димера в кремнии методом ИК-поглощенияCalibrations coefficients for determination of concentrations of vacancy-oxygen-related complexes and oxygen dimer in silicon by means of infrared absorption spectroscopyhttps://orcid.org/0000-0002-8099-6236МедведеваИ. Ф.MedvedevaI. F.

Медведева Ирина Федоровна – кандидат физико-математических наук, доцент

пр. Дзержинского, 83, 220016, Минск, Республика Беларусь

Irina F. Medvedeva – Ph. D. (Physics and Mathematics), Associated Professor

83, Dzerzinski Ave., 220016, Minsk, Republic of Belarus

medvedeva@ifttp.basnet.byhttps://orcid.org/0000-0002-2503-6144МаркевичВ. П.MarkevichV. P.

Маркевич Владимир Павлович – кандидат физико-математических наук, старший научный сотрудник

Manchester M13 9PL, United Kingdom

Vladimir P. Markevich – Ph. D. (Physics and Mathematics), Senior Research Fellow

Manchester M13 9PL, United Kingdom

V.Markevich@manchester.ac.ukhttps://orcid.org/0000-0002-2085-5407ТолкачеваЕ. А.TalkachovaK. A.

Толкачева Екатерина Анатольевна – кандидат физико-математических наук, заместитель начальника центра

ул. Филимонова, 25, 220114, Минск, Республика Беларусь

Katsiaryna A. Talkachova – Ph. D. (Physics and Mathematics), Senior Researcher

25, Filimonov Str., 220114, Minsk, Republic of Belarus

talkachova@physics.byhttps://orcid.org/0000-0002-0486-1348ФадееваЕ. А.FadzeyevaA. A.

Фадеева Елена Александровна – кандидат физико-математических наук, старший научный сотрудник

ул. П. Бровки, 19, 220072, Минск, Республика Беларусь

Аlena A. Fadzeyeva – Ph. D. (Physics and Mathematics), Senior Researcher

19, P. Brovka Str., 220072, Minsk, Republic of Belarus

fadzeyeva@physics.byhttps://orcid.org/0000-0002-4423-2351ЖдановичД. Н.ZhdanovichD. N.

Жданович Дмитрий Николаевич – младший научный сотрудник

ул. П. Бровки, 19, 220072, Минск, Республика Беларусь

Dzmitry N. Zhdanovich – Junior Researcher

19, P. Brovka Str., 220072, Minsk, Republic of Belarus

zhdanovich_d@physics.byhttps://orcid.org/0000-0001-8448-8573МуринЛ. И.MurinL. I.

Мурин Леонид Иванович – кандидат физико-математических наук, ведущий научный сотрудник

ул. П. Бровки, 19, 220072, Минск, Республика Беларусь

Leonid I. Murin – Ph. D. (Physics and Mathematics), Leading Researcher

19, P. Brovka Str., 220072, Minsk, Republic of Belarus

Белорусский государственный медицинский университетBelarusian State Medical UniversityИнститут фотоники Университета г. МанчестерPhoton Science Institute and School of Electrical and Electronic Engineering, University of ManchesterНаучно-практический центр Государственного комитета судебных экспертиз Республики БеларусьScientific and Practical Center of the State Committee for Forensic Expertise of the Republic of BelarusНаучно-практический центр Национальной академии наук Беларуси по материаловедениюScientific-Practical Materials Research Center of the National Academy of Sciences of Belarus202116072021662227233Copyright © Медведева И.Ф., Маркевич В.П., Толкачева Е.А., Фадеева Е.А., Жданович Д.Н., Мурин Л.И., 20212021Медведева И.Ф., Маркевич В.П., Толкачева Е.А., Фадеева Е.А., Жданович Д.Н., Мурин Л.И.Medvedeva I.F., Markevich V.P., Talkachova K.A., Fadzeyeva A.A., Zhdanovich D.N., Murin L.I.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://vestift.belnauka.by/jour/article/view/671

Вакансионно-кислородные комплексы VnOm (n, m ≥ 1) в кристаллах кремния являются центрами зарождения кислородных преципитатов, которые широко используются в качестве внутренних геттеров нежелательных примесей в современных технологиях изготовления кремниевых электронных приборов и интегральных ми кросхем. Для контролируемого формирования кислородных преципитатов в кристаллах Si в технологических процессах необходимы методы измерения концентрации комплексов VnOm. Целью настоящей работы было нахождение калибровочных коэффициентов для определения концентрации вакансионно-кислородных дефектов в кремнии из интенсивностей полос инфракрасного (ИК) поглощения, связанных с локальными колебательными модами (ЛКМ) этих комплексов. С использованием электрических (эффект Холла) и оптических (ИК поглощение) измерений проведено комплексное исследование вакансионно-кислородных центров в кристаллах кремния, облученных электронами с энергией 6 МэВ. На основе анализа полученных данных установлены значения калибровочных коэффициентов для определения концентрации комплекса вакансия-кислород (VO) в кремнии методом инфракрасного поглощения: для измерений при комнатной температуре (RT) – NVO = 8,5 · 1016 · αVO-RT см–3, в случае низкотемпературных (LT, Т ≡ 10 К) измерений – N VO = 3,5 · 1016 · αVO-LT см–3, где αVO-RT(LT) – коэффициенты поглощения в максимумах полос ЛКМ комплекса VO в спектрах, измеренных при соответствующей температуре. Установлены также калибровочные коэффициенты для определения концентраций других вакансионно-кислородных комплексов VnOm (VO2, VO3, VO4, V2O и V3O) и кислородного димера (O2) из анализа спектров поглощения измеренных при комнатной температуре.

Vacancy-oxygen complexes VnOm (n, m ≥ 1) in crystalline silicon are nucleation centers for oxygen precipitates, which are widely used as internal getters in modern technologies of production of silicon-based electronic devices and integrated circuits. For the controllable formation of oxygen precipitates in Si crystals in the technology processes the methods of determination of concentrations of the VnOm complexes are required. The aim of the present work was to find values of the calibration coefficients for determination of concentrations of the VnOm defects in Si from intensities of infrared (IR) absorption bands associated with the local vibrational modes (LVM) of these complexes. A combined electrical (Hall effect) and optical (IR absorption) study of vacancy-oxygen defects in identical silicon crystals irradiated with 6 MeV electrons was carried out. Based on the analysis of the data obtained, the values of the calibration coefficient for the determination of concentration of the vacancy-oxygen (VO) complex in silicon by the infrared absorption method were established: for measurements at room temperature (RT) – NVO = 8.5 · 1016 · αVO-RT cm–3, in the case of low-temperature (LT, Т ≡ 10 K) measurements – NVO = 3.5 · 1016 · αVO-LT cm–3, where αVO-RT(LT) are absorption coefficients in maxima of the LVM bands due to the VO complex in the spectra measured at corresponding temperatures. Calibration coefficients for the determination of concentrations of other VnOm (VO2, VO3, VO4, V2O and V3O) complexes and the oxygen dimer (O2) from an analysis of infrared absorption spectra measured at room temperature have been also determined.

кремнийвакансионно-кислородные комплексыкислородные димерыколебательные полосы поглощениякалибровочные коэффициентыsiliconvacancy-oxygen complexesoxygen dimersvibrational absorption bandscalibration coefficientsReferencesNewman R. C. Oxygen diffusion and precipitation in Czochralski silicon. Journal of Physics: Condensed Matter, 2000, vol. 12, no. 25, pp. R335–R365. https://doi.org/10.1088/0953-8984/12/25/201Newman R. C. Oxygen diffusion and precipitation in Czochralski silicon. Journal of Physics: Condensed Matter, 2000, vol. 12, no. 25, pp. R335–R365. https://doi.org/10.1088/0953-8984/12/25/201Pajot B., ClerjaudB.Optical absorption of impurities and defects in semiconducting crystal: Electronic absorption of deep centres and vibrational spectra. Berlin, Springer, 2013. 510p.https://doi.org/10.1007/978-3-642-18018-7Pajot B., ClerjaudB.Optical absorption of impurities and defects in semiconducting crystal: Electronic absorption of deep centres and vibrational spectra. Berlin, Springer, 2013. 510p.https://doi.org/10.1007/978-3-642-18018-7Baghdadi A., BullisW.M., CroarkinM.C., Yue Zhen Li, Scace R.I., SeriesR.W., Stallhofer P., Watanabe M. Interlaboratory determination of the calibration factor for the measurement of the interstitial oxygen content of silicon by infrared absorption. Journal of The Electrochemical Society,1989, vol. 136, no. 7, pp. 2015–2024. https://doi.org/ 10.1149/1.2097135Baghdadi A., BullisW.M., CroarkinM.C., Yue Zhen Li, Scace R.I., SeriesR.W., Stallhofer P., Watanabe M. Interlaboratory determination of the calibration factor for the measurement of the interstitial oxygen content of silicon by infrared absorption. Journal of The Electrochemical Society,1989, vol. 136, no. 7, pp. 2015–2024. https://doi.org/ 10.1149/1.2097135Chroneos A., Sgourou E. N., Londos C. A., Schwingenschlögl U. Oxygen defect processes in silicon and silicon germanium. Applied Physics Reviews, 2015, vol. 2, no. 2, pp. 021306-(1-16). https://doi.org/10.1063/1.4922251Chroneos A., Sgourou E. N., Londos C. A., Schwingenschlögl U. Oxygen defect processes in silicon and silicon germanium. Applied Physics Reviews, 2015, vol. 2, no. 2, pp. 021306-(1-16). https://doi.org/10.1063/1.4922251Londos C. A., Fytros L. G., Georgiou G. J. IR studies of oxygen-vacancy related defects in irradiated silicon. Defect and Diffusion Forum, 1999, vol. 171–172, pp. 1–32. https://doi.org/10.4028/www.scientific.net/DDF.171-172.1Londos C. A., Fytros L. G., Georgiou G. J. IR studies of oxygen-vacancy related defects in irradiated silicon. Defect and Diffusion Forum, 1999, vol. 171–172, pp. 1–32. https://doi.org/10.4028/www.scientific.net/DDF.171-172.1LindströmJ.L., Murin L. I., HallbergТ., Markevich V.P., Kleverman M., HermanssonJ., Svensson B. G. Defect engineering in Czochralski silicon by electron irradiation at different temperatures. Nuclear Instruments and Methods in Physics Research B., 2002, vol. 186, pp. 121–125.https://doi.org/10.1016/S0168-583X(01)00871-0LindströmJ.L., Murin L. I., HallbergТ., Markevich V.P., Kleverman M., HermanssonJ., Svensson B. G. Defect engineering in Czochralski silicon by electron irradiation at different temperatures. Nuclear Instruments and Methods in Physics Research B., 2002, vol. 186, pp. 121–125.https://doi.org/10.1016/S0168-583X(01)00871-0Murin L.I., Lindström J.L., Svensson B.G., Markevich V.P., Londos C.A. VOn (n3) defects in irradiated and heat-treated silicon. Solid State Phenomena, 2005, vols. 108–109, pp. 267–272.https://doi.org/10.4028/www.scientific.net/SSP.108-109.267Murin L.I., Lindström J.L., Svensson B.G., Markevich V.P., Londos C.A. VOn (n3) defects in irradiated and heat-treated silicon. Solid State Phenomena, 2005, vols. 108–109, pp. 267–272.https://doi.org/10.4028/www.scientific.net/SSP.108-109.267Murin L.I., Lindström J.L., Markevich V.P., Medvedeva I.F., Torres V.J. B., Coutinho J. Metastable VO2 complexes in silicon: experimental and theoretical modeling studies.Solid StatePhenomena, 2005; vols. 108–109, pp. 223–228. https://doi.org/10.4028/www.scientific.net/SSP.108-109.223Murin L.I., Lindström J.L., Markevich V.P., Medvedeva I.F., Torres V.J. B., Coutinho J. Metastable VO2 complexes in silicon: experimental and theoretical modeling studies.Solid StatePhenomena, 2005; vols. 108–109, pp. 223–228. https://doi.org/10.4028/www.scientific.net/SSP.108-109.223Murin L.I., Svensson B.G., Lindström J.L., Markevich V.P., Londos C.A. Divacancy-oxygen and trivacancy-oxygen complexes in silicon: Local Vibrational Mode studies.Solid State Phenomena, 2010, vols. 156–158, pp. 129–134.https://doi.org/10.4028/www.scientific.net/SSP.156-158.129Murin L.I., Svensson B.G., Lindström J.L., Markevich V.P., Londos C.A. Divacancy-oxygen and trivacancy-oxygen complexes in silicon: Local Vibrational Mode studies.Solid State Phenomena, 2010, vols. 156–158, pp. 129–134.https://doi.org/10.4028/www.scientific.net/SSP.156-158.129Tolkacheva E. A., Markevich V. P., Murin L. I. Optical properties and the mechanism of the formation of V2O2 and V3O2 vacancy-oxygen complexes in irradiated silicon crystals. Semiconductors, 2018, vol. 52, no. 9, pp. 1097–1103. https://doi.org/10.1134/S1063782618090221Tolkacheva E. A., Markevich V. P., Murin L. I. Optical properties and the mechanism of the formation of V2O2 and V3O2 vacancy-oxygen complexes in irradiated silicon crystals. Semiconductors, 2018, vol. 52, no. 9, pp. 1097–1103. https://doi.org/10.1134/S1063782618090221Watkins G. D., Corbett J. W. Defects in irradiated silicon. I. Electron spin resonance of the Si – A center. Physics Reviews, 1961, vol. 121, no. 4, pp. 1001–1014.https://doi.org/10.1103/PhysRev.121.1001Watkins G. D., Corbett J. W. Defects in irradiated silicon. I. Electron spin resonance of the Si – A center. Physics Reviews, 1961, vol. 121, no. 4, pp. 1001–1014.https://doi.org/10.1103/PhysRev.121.1001Oates A.S., Newman R.C. Involvement of oxygen-vacancy defects in enhancing oxygen diffusion in silicon. Applied Physics Letters, 1986, vol. 49, no.5, pp. 262–264.https://doi.org/10.1063/1.97190Oates A.S., Newman R.C. Involvement of oxygen-vacancy defects in enhancing oxygen diffusion in silicon. Applied Physics Letters, 1986, vol. 49, no.5, pp. 262–264.https://doi.org/10.1063/1.97190Davies G., Lightowlers E.C., Newman R.C., Oates A.S. A model for radiation damage effects in carbon-doped crystalline silicon. Semiconductor Science and Technology, 1987, vol. 2, no. 8, pp. 524–532.https://doi.org/10.1088/0268-1242/2/8/009Davies G., Lightowlers E.C., Newman R.C., Oates A.S. A model for radiation damage effects in carbon-doped crystalline silicon. Semiconductor Science and Technology, 1987, vol. 2, no. 8, pp. 524–532.https://doi.org/10.1088/0268-1242/2/8/009Quemener V., Raeissi B., Herklotz F., Murin L.I., Monakhov E.V., Svensson B.G. Kinetics study of the evolution of oxygen-related defects in mono-crystalline silicon subjected to electron-irradiation and thermal treatment. Journal of Applied Physics, 2015, vol. 118, no. 13, pp. 135703-(1-9).https://doi.org/10.1063/1.4932019Quemener V., Raeissi B., Herklotz F., Murin L.I., Monakhov E.V., Svensson B.G. Kinetics study of the evolution of oxygen-related defects in mono-crystalline silicon subjected to electron-irradiation and thermal treatment. Journal of Applied Physics, 2015, vol. 118, no. 13, pp. 135703-(1-9).https://doi.org/10.1063/1.4932019Tolkacheva E. A., Markevich V. P., Murin L. I. Local vibrational modes of vacancy-oxygen-related complexes at room temperature. VestsіNatsyianal’naiakademііnavuk Belarusі. Seryia fіzіka-matematychnykhnavuk = Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics series, 2020, vol. 56, no. 4, pp. 480–487 (in Russian). https://doi.org/10.29235/1561-2430-2020-56-4-480-487Tolkacheva E. A., Markevich V. P., Murin L. I. Local vibrational modes of vacancy-oxygen-related complexes at room temperature. VestsіNatsyianal’naiakademііnavuk Belarusі. Seryia fіzіka-matematychnykhnavuk = Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics series, 2020, vol. 56, no. 4, pp. 480–487 (in Russian). https://doi.org/10.29235/1561-2430-2020-56-4-480-487Blakemore J. S. Semiconductor Statistics. Oxford, Pergamon Press, 1962. 380 p.https://doi.org/10.1016/C2013-0-01678-7Blakemore J. S. Semiconductor Statistics. Oxford, Pergamon Press, 1962. 380 p.https://doi.org/10.1016/C2013-0-01678-7Hoffman H. J. Defect-level analysis of semiconductors by a new differential evaluation of n (1/T) – characteristics. Applied Physics, 1979, vol. 19, no. 3, pp. 307–312.https://doi.org/10.1007/BF00900474Hoffman H. J. Defect-level analysis of semiconductors by a new differential evaluation of n (1/T) – characteristics. Applied Physics, 1979, vol. 19, no. 3, pp. 307–312.https://doi.org/10.1007/BF00900474Tolkacheva E. A., Murin L. I. Influence of isotopic composition of natural silicon on local vibrational modes of vacancy-oxygen complexes. Journal of Applied Spectroscopy, 2013, vol. 80, no. 4, pp. 571–575. https://doi.org/10.1007/s10812-013-9807-3Tolkacheva E. A., Murin L. I. Influence of isotopic composition of natural silicon on local vibrational modes of vacancy-oxygen complexes. Journal of Applied Spectroscopy, 2013, vol. 80, no. 4, pp. 571–575. https://doi.org/10.1007/s10812-013-9807-3Markevich V. P., Murin L. I., Lastovskii S. B., Medvedeva I. F., Komarov B. A., Lindström J. L., Peaker A. R. Electrically active radiation-induced defects in Czochralski-grown Si with low carbon content. Journal of Physics: Condensed Matter, 2005, vol. 17, no. 22, pp. S2331–S2340. https://doi.org/10.1088/0953-8984/17/22/022Markevich V. P., Murin L. I., Lastovskii S. B., Medvedeva I. F., Komarov B. A., Lindström J. L., Peaker A. R. Electrically active radiation-induced defects in Czochralski-grown Si with low carbon content. Journal of Physics: Condensed Matter, 2005, vol. 17, no. 22, pp. S2331–S2340. https://doi.org/10.1088/0953-8984/17/22/022Markevich V. P., Murin L. I., Lastovskii S. B., Medvedeva I. F., Lindström J. L., Peaker A. R., Coutinho J., Jones R., Torres V. J. B., Briddon P. R. Electronic properties and structure of a complex incorporating a self-interstitial and two oxygen atoms in silicon. Solid State Phenomena, 2005, vols. 108–109, pp. 273–278. https://doi.org/10.4028/www.scientific.net/SSP.108-109.273Markevich V. P., Murin L. I., Lastovskii S. B., Medvedeva I. F., Lindström J. L., Peaker A. R., Coutinho J., Jones R., Torres V. J. B., Briddon P. R. Electronic properties and structure of a complex incorporating a self-interstitial and two oxygen atoms in silicon. Solid State Phenomena, 2005, vols. 108–109, pp. 273–278. https://doi.org/10.4028/www.scientific.net/SSP.108-109.273Korshunov F. P., Markevich V. P., Medvedeva I. F., Murin L. I. Acceptor levels of a divacancy in silicon. Soviet Physics of Semiconductors, 1992, vol. 26, no. 11, pp. 1129–1131.Korshunov F. P., Markevich V. P., Medvedeva I. F., Murin L. I. Acceptor levels of a divacancy in silicon. Soviet Physics of Semiconductors, 1992, vol. 26, no. 11, pp. 1129–1131.Evwaraye A. O., Sun E. Electron-irradiation-induced divacancy in lightly doped silicon. Journal of Applied Physics, 1976, vol. 47, no. 9, pp. 3776–3780. https://doi.org/10.1063/1.323260Evwaraye A. O., Sun E. Electron-irradiation-induced divacancy in lightly doped silicon. Journal of Applied Physics, 1976, vol. 47, no. 9, pp. 3776–3780. https://doi.org/10.1063/1.323260Markevich V. P., Peaker A. R., Lastovskii S. B., Murin L. I., Lindström J. L. Defect reactions associated with divacancy elimination in silicon. Journal of Physics: Condensed Matter, 2003, vol. 15, no. 39, pp. S2779–S2789. https://doi.org/10.1088/0953-8984/15/39/002Markevich V. P., Peaker A. R., Lastovskii S. B., Murin L. I., Lindström J. L. Defect reactions associated with divacancy elimination in silicon. Journal of Physics: Condensed Matter, 2003, vol. 15, no. 39, pp. S2779–S2789. https://doi.org/10.1088/0953-8984/15/39/002Murin L. I., Hallberg T., Markevich V. P., Lindström J. L. Experimental evidence of the oxygen dimer in silicon. Physical Review Letters, 1998, vol. 73, no. 1, pp. 93–96. https://doi.org/10.1103/PhysRevLett.80.93Murin L. I., Hallberg T., Markevich V. P., Lindström J. L. Experimental evidence of the oxygen dimer in silicon. Physical Review Letters, 1998, vol. 73, no. 1, pp. 93–96. https://doi.org/10.1103/PhysRevLett.80.93Bothe K., Schmidt J. Electronically activated boron-oxygen-related recombination centers in crystalline silicon. Journal of Applied Physics, 2006, vol. 99, no. 1, pp. 013701-(1-11).https://doi.org/10.1063/1.2140584Bothe K., Schmidt J. Electronically activated boron-oxygen-related recombination centers in crystalline silicon. Journal of Applied Physics, 2006, vol. 99, no. 1, pp. 013701-(1-11).https://doi.org/10.1063/1.2140584Voronkov V. V., Falster R.Latent complexes of interstitial boron and oxygen dimers as a reason for degradation of silicon-based solar cells. Journal of Applied Physics, 2010, vol. 107, no. 5, pp. 053509-(1-8).https://doi.org/10.1063/1.1851593Voronkov V. V., Falster R.Latent complexes of interstitial boron and oxygen dimers as a reason for degradation of silicon-based solar cells. Journal of Applied Physics, 2010, vol. 107, no. 5, pp. 053509-(1-8).https://doi.org/10.1063/1.1851593Murin L. I., Tolkacheva E. A., Markevich V. P., Peaker A. R., Hamilton B., Svensson B. G., Lindström J. L., Santos P., Coutinho J., Carvalho A. The oxygen dimer in Si: its relationship to the light-induced degradation of Si solar cells? Applied Physics Letters, 2011, vol. 98, no. 18, pp. 182101–182104. https://doi.org/10.1063/1.3584138Murin L. I., Tolkacheva E. A., Markevich V. P., Peaker A. R., Hamilton B., Svensson B. G., Lindström J. L., Santos P., Coutinho J., Carvalho A. The oxygen dimer in Si: its relationship to the light-induced degradation of Si solar cells? Applied Physics Letters, 2011, vol. 98, no. 18, pp. 182101–182104. https://doi.org/10.1063/1.3584138Vaqueiro-Contreras M., Markevich V. P., Coutinho J., Santos P., Crowe I. F., Halsall M. P., Hawkins I., Lastovskii S. B., Murin L. I., Peaker A. R. Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells. Journal of Applied Physics, 2019, vol. 125, no. 18, pp. 185704-(1-16). https://doi.org/10.1063/1.5091759Vaqueiro-Contreras M., Markevich V. P., Coutinho J., Santos P., Crowe I. F., Halsall M. P., Hawkins I., Lastovskii S. B., Murin L. I., Peaker A. R. Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells. Journal of Applied Physics, 2019, vol. 125, no. 18, pp. 185704-(1-16). https://doi.org/10.1063/1.5091759Coutinho J., Jones R., Briddon P. R., Öberg S. Oxygen and dioxygen centers in Si and Ge: Density-functional calculations. Physical Review B, 2000, vol. 62, no. 16, pp. 10824–10840. https://doi.org/10.1103/PhysRevB.62.10824Coutinho J., Jones R., Briddon P. R., Öberg S. Oxygen and dioxygen centers in Si and Ge: Density-functional calculations. Physical Review B, 2000, vol. 62, no. 16, pp. 10824–10840. https://doi.org/10.1103/PhysRevB.62.10824Pesola M., Boehm J. von, Nieminen R. M. Vibrations of the interstitial oxygen pairs in silicon. Physical Review Letters,1999, vol. 82, no. 20, pp. 4022–4025. https://doi.org/10.1103/PhysRevLett.82.4022Pesola M., Boehm J. von, Nieminen R. M. Vibrations of the interstitial oxygen pairs in silicon. Physical Review Letters,1999, vol. 82, no. 20, pp. 4022–4025. https://doi.org/10.1103/PhysRevLett.82.4022Hallberg T., Lindström J. L., Murin L. I., Markevich V. P. The oxygen dimer in silicon: some experimental observations. Materials Science Forum, 1997, vols. 258–263, pp. 361–366. https://doi.org/10.4028/www.scientific.net/MSF.258-263.361Hallberg T., Lindström J. L., Murin L. I., Markevich V. P. The oxygen dimer in silicon: some experimental observations. Materials Science Forum, 1997, vols. 258–263, pp. 361–366. https://doi.org/10.4028/www.scientific.net/MSF.258-263.361Newman R. C. The initial stages of oxygen aggregation in silicon: dimer, hydrogen and self-interstitials. Jones R. (ed.) Early stages of oxygen precipitation in silicon. (Kluwer Academic Publ.) Proc. of the NATO Advanced Research Workshop, Exeter, UK, March 1996, pp. 19–39. https://doi.org/10.1007/978-94-009-0355-5_2Newman R. C. The initial stages of oxygen aggregation in silicon: dimer, hydrogen and self-interstitials. Jones R. (ed.) Early stages of oxygen precipitation in silicon. (Kluwer Academic Publ.) Proc. of the NATO Advanced Research Workshop, Exeter, UK, March 1996, pp. 19–39. https://doi.org/10.1007/978-94-009-0355-5_2

The authors declare that there are no conflicts of interest present.