<?xml version="1.0" encoding="UTF-8"?>
<!DOCTYPE article PUBLIC "-//NLM//DTD JATS (Z39.96) Journal Publishing DTD v1.3 20210610//EN" "JATS-journalpublishing1-3.dtd">
<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">vestift</journal-id><journal-title-group><journal-title xml:lang="ru">Известия Национальной академии наук Беларуси. Серия физико-технических наук</journal-title><trans-title-group xml:lang="en"><trans-title>Proceedings of the National Academy of Sciences of Belarus. Physical-technical series</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1561-8358</issn><issn pub-type="epub">2524-244X</issn><publisher><publisher-name>The Republican Unitary Enterprise Publishing House "Belaruskaya Navuka"</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.29235/1561-8358-2022-67-3-285-297</article-id><article-id custom-type="elpub" pub-id-type="custom">vestift-753</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ЭНЕРГЕТИКА, ТЕПЛО- И МАССООБМЕН</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>POWER ENGINEERING, HEAT AND MASS TRANSFER</subject></subj-group></article-categories><title-group><article-title>Теплопроводность нитрида галлия с кристаллической  структурой типа вюрцита</article-title><trans-title-group xml:lang="en"><trans-title>Thermal conductivity of wurtzite gallium nitride</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-6942-810X</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Волчёк</surname><given-names>В. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Volcheck</surname><given-names>V. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Волчёк Владислав Сергеевич, научный сотрудник</p><p>ул. П. Бровки, 6, 220013, Минск</p></bio><bio xml:lang="en"><p>Vladislav S. Volcheck, Researcher</p><p>6, P. Brovka Str., 220013, Minsk</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-2618-4464</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Баранова</surname><given-names>М. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Baranava</surname><given-names>M. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Баранова Мария Сергеевна, научный сотрудник</p><p>ул. П. Бровки, 6, 220013, Минск</p></bio><bio xml:lang="en"><p>Maryia S. Baranava, Researcher</p><p>6, P. Brovka Str., 220013, Minsk</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-9362-7539</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Стемпицкий</surname><given-names>В. Р.</given-names></name><name name-style="western" xml:lang="en"><surname>Stempitsky</surname><given-names>V. R.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Стемпицкий Виктор Романович, кандидат  технических наук, доцент, проректор по научной  работе, начальник научно-исследовательской части</p><p>ул. П. Бровки, 6, 220013, Минск</p></bio><bio xml:lang="en"><p>Viktor R. Stempitsky, Ph. D. (Engineering), Associate Professor, Vice-Rector for Research and Development, Head of Research and Development Department,</p><p>6, P. Brovka Str., 220013, Minsk</p></bio><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Белорусский государственный университет информатики и радиоэлектроники</institution></aff><aff xml:lang="en"><institution>Belarusian State University of Informatics and Radioelectronics</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2022</year></pub-date><pub-date pub-type="epub"><day>08</day><month>10</month><year>2022</year></pub-date><volume>67</volume><issue>3</issue><fpage>285</fpage><lpage>297</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Волчёк В.С., Баранова М.С., Стемпицкий В.Р., 2022</copyright-statement><copyright-year>2022</copyright-year><copyright-holder xml:lang="ru">Волчёк В.С., Баранова М.С., Стемпицкий В.Р.</copyright-holder><copyright-holder xml:lang="en">Volcheck V.S., Baranava M.S., Stempitsky V.R.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://vestift.belnauka.by/jour/article/view/753">https://vestift.belnauka.by/jour/article/view/753</self-uri><abstract><p>Выполнен анализ теоретических и экспериментальных исследований одного из важнейших параметров нитрида галлия с кристаллической структурой типа вюрцита – теплопроводности. Так как перенос тепла в нитриде галлия осуществляется главным образом с помощью фононов, его теплопроводность имеет температурную зависимость, характерную для большинства неметаллических кристаллов: увеличивается пропорционально третьей степени температуры в области низких температур, достигает своего максимального значения при температуре, приблизительно равной 1/20 от дебаевской, и уменьшается пропорционально температуре в области высоких температур. Показано, что в зависимости от условий (технология изготовления образца, кристаллографическое направление, концентрация примеси и других дефектов, изотопный состав) теплопроводность нитрида галлия может находиться в большом диапазоне значений, что указывает на важность определения этого параметра именно тех образцов материала, которые используются в конкретных приложениях. Теплопроводность нелегированного изотопно-чистого нитрида галлия при комнатной температуре оценивается на уровне 5,4 Вт/(см·К). Максимальная теплопроводность, достигнутая для объемного образца из монокристаллического нитрида галлия, равна 2,79 Вт/(см·К).</p></abstract><trans-abstract xml:lang="en"><p>This paper reviews the theoretical and experimental works concerning one of the most important parameters of wurtzite gallium nitride – thermal conductivity. Since the heat in gallium nitride is transported almost exclusively by phonons, its thermal conductivity has a temperature behavior typical of most nonmetallic crystals: the thermal conductivity increases proportionally to the third power of temperature at lower temperatures, reaches its maximum at approximately 1/20 of the Debye temperature and decreases proportionally to temperature at higher temperatures. It is shown that the thermal conductivity of gallium nitride (depending on fabrication process, crystallographic direction, concentration of impurity and other defects, isotopical purity) varies significantly, emphasizing the importance of determining this parameter for the samples that closely resemble those being used in specific applications. For isotopically pure undoped wurtzite gallium nitride, the thermal conductivity at room temperature has been estimated as high as 5.4 W/(cm·K). The maximum room temperature value measured for bulkshaped samples of single crystal gallium nitride has been 2.79 W/(cm·K).</p></trans-abstract><kwd-group xml:lang="ru"><kwd>нитрид галлия</kwd><kwd>теплопроводность</kwd><kwd>фонон</kwd><kwd>GaN</kwd><kwd>температурная зависимость</kwd></kwd-group><kwd-group xml:lang="en"><kwd>gallium nitride</kwd><kwd>phonon</kwd><kwd>thermal conductivity</kwd><kwd>GaN</kwd><kwd>temperature dependence</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Quay R. Gallium Nitride Electronics. Berlin; Heidelberg, Springer, 2008. 470 p.</mixed-citation><mixed-citation xml:lang="en">Quay R. Gallium Nitride Electronics. Berlin; Heidelberg, Springer, 2008. 470 p.</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">Roccaforte F., Leszczynski M. (eds.). 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