vestiftИзвестия Национальной академии наук Беларуси. Серия физико-технических наукProceedings of the National Academy of Sciences of Belarus. Physical-technical series1561-83582524-244XThe Republican Unitary Enterprise Publishing House "Belaruskaya Navuka"10.29235/1561-8358-2023-68-1-7-17vestift-776Research ArticleМАТЕРИАЛОВЕДЕНИЕ, МЕТАЛЛУРГИЯMATERIALS SCIENCES AND ENGINEERING, METALLURGYАнодирование алюминия в вязком электролите для формирования одномерных фотонных кристалловAnodizing aluminum in a viscous electrolyte to produce one-dimensional photonic crystalsГасенковаИ. В.GasenkovaI. V.

Гасенкова Ирина Владимировна – доктор физико-математических наук, главный научный сотрудник

Логойский тракт, 22, 220090, Минск

Irina V. Gasenkova – Dr. Sci. (Physics and Mathematics), Leading Researcher

22, Logoiskii trakt, 220090, Minsk

gasenkova@oelt.basnet.byМухуровН. И.MukhurovN. I.

Мухуров Николай Иванович – доктор технических наук, заведующий лабораторией

Логойский тракт, 22, 220090, Минск

Nikolai I. Mukhurov – Dr. Sci. (Engineering), Head of the Laboratory

22, Logoiskii trakt, 220090, Minsk

n.mukhurov@dragon.bas-net.byАндруховичИ. В.AndrukhovichI. M.

Андрухович Ирина Михайловна – кандидат технических наук, старший научный сотрудник

Логойский тракт, 22, 220090, Минск

Iryna M. Andrukhovich – Ph. D. (Engineering), Senior Researcher

22, Logoiskii trakt, 220090, Minsk

irini.andrukhovich@gmail.comГосударственное научно-производственное объединение «Оптика, оптоэлектроника и лазерная техника»State Scientific and Production Association “Optic, Optoelectronic and Laser Technique”202301042023681717Copyright © Гасенкова И.В., Мухуров Н.И., Андрухович И.В., 20232023Гасенкова И.В., Мухуров Н.И., Андрухович И.В.Gasenkova I.V., Mukhurov N.I., Andrukhovich I.M.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://vestift.belnauka.by/jour/article/view/776

Показана возможность формирования анодного оксида алюминия (АОА) со свойствами одномерного фотонного кристалла вдоль нормали к поверхности. Структура АОА представлена чередующимися слоями различной пористости и сформирована в вязком электролите на основе серной кислоты и этиленгликоля при периодически изменяющейся плотности тока с 1,8 на 0,4 мА/см2 с прямоугольной формой импульса. Определены размеры пор и расстояние между ними, плотность пор и пористость, толщина и период структуры АОА. Изучены особенности спектров зеркального отражения одиночных составляющих структуру АОА слоев и структур одномерных фотонных кристаллов, сформированных из 165 периодов, каждый из которых соответствовал росту оксида при плотностях тока 1,8 и 0,4 мА/см2. Отмечено увеличение пористости верхних слоев структуры вследствие химического травления пор в процессе роста оксида. Показано, что неизменность спектрального положения фотонной запрещенной зоны для структур АОА достигается уменьшением заряда на каждом последующем цикле анодирования на 0,1 % при их формировании, что приводит к уменьшению периода структуры в нижних слоях, компенсируя рост пористости в верхних слоях. Спектры отражения проанализированы для углов падения 10° и 30° и использованы для расчета периода структуры и эффективного показателя преломления. Эффективный показатель преломления одиночных составляющих структуру АОА слоев рассчитан с использованием оптических осцилляций Фабри–Перо. Для АОА со свойствами одномерного фотонного кристалла при нормальном падении света наблюдается зеленая окраска, а при изменении угла – радужная. АОА может быть использован как декоративное покрытие на корпусах электронных приборов (планшеты, ноутбуки, телефоны и др.) и при создании объектов дизайна из алюминия и его сплавов.

In the paper, the possibility to produce anodic aluminum oxide (AAO) featuring one-dimensional photonic crystal along the normal to the surface is shown. The AAO structure is represented by alternating layers of different porosity and is formed in a viscous electrolyte based on sulfuric acid and ethylene glycol at the periodically varying from high (1.8 mA/cm2) to low (0.4 mA/cm2) current density with a rectangular pulse shape. The pore sizes and interpore distance, pore density and porosity, thickness and period of the AAO structure have been determined. The specular reflection spectra features for single layers that make up the AAO structure and for one-dimensional photonic crystals structures consisting of 165 periods have been studied. An increase in the porosity of the upper layers of the structure due to chemical etching of the pores during the oxide growth is noted. It is shown that the invariance of the spectral position of the photonic band gap for AAO structures is achieved by a 0.1 % decrease in charge at each subsequent anodizing cycle during their formation, which leads to a decrease in the period of the structure in the lower layers, compensating for the increase in the upper layers porosity. The reflection spectra have been analyzed for the incidence angles of 10° and 30° and used to calculate the period of the structure and the effective refractive index. The effective refractive index of the single layers that make up the AAO structure is calculated using the optical Fabry–Perot oscillations. For AAO with the properties of one-dimensional photonic crystal, a green color is observed at normal light incidence, and an iridescent color is observed when the angle changes. AAO can be used as a decorative coating on the housings of electronic devices (tablets, laptops, phones, etc.) and when creating design objects made of aluminum and its alloys.

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The authors declare that there are no conflicts of interest present.