vestiftИзвестия Национальной академии наук Беларуси. Серия физико-технических наукProceedings of the National Academy of Sciences of Belarus. Physical-technical series1561-83582524-244XThe Republican Unitary Enterprise Publishing House "Belaruskaya Navuka"10.29235/1561-8358-2023-68-2-156-166vestift-800Research ArticleРАДИОЭЛЕКТРОНИКА, ПРИБОРОСТРОЕНИЕRADIOELECTRONICS, INSTRUMENT-MAKINGЭксплуатационные характеристики транзистора с высокой подвижностью электронов на основе нитрида галлия с теплоотводящими элементами на основе нитрида бораDevice characterization of gallium nitride high electron mobility transistor with a boron nitride heat-spreading elementВолчёкВ. С.VolcheckV. S.

Волчёк Владислав Сергеевич – научный сотрудник

ул. П. Бровки, 6, 220013, Минск, Республика Беларусь

Vladislav S. Volcheck – Researcher

6, P. Brovka Str., 220013, Minsk, Republic of Belarus

vlad.volchek@bsuir.byСтемпицкийВ. Р.StempitskyV. R.

Стемпицкий Виктор Романович – кандидат технических наук, доцент, проректор по научной работе, начальник научно-исследовательской части

ул. П. Бровки, 6, 220013, Минск, Республика Беларусь

Viktor R. Stempitsky – Cand. Sci. (Engineering), Associate Professor, Vice-Rector for Research and Development, Head of Research and Development Department

6, P. Brovka Str., 220013, Minsk, Republic of Belarus

vstem@bsuir.byБелорусский государственный университет информатики и радиоэлектроникиBelarusian State University of Informatics and Radioelectronics202309072023682156166Copyright © Волчёк В.С., Стемпицкий В.Р., 20232023Волчёк В.С., Стемпицкий В.Р.Volcheck V.S., Stempitsky V.R.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://vestift.belnauka.by/jour/article/view/800

Предлагается метод уменьшения влияния эффекта саморазогрева в транзисторах с высокой подвижностью электронов на основе нитрида галлия, который заключается в использовании слоя нитрида бора в качестве теплоотводящего элемента. Высокая теплопроводность и низкая электрическая проводимость нитрида бора позволяют располагать слой на его основе вблизи активной области и находиться в плотном контакте с электродами и теплопоглощающим элементом, формируя таким образом дополнительный канал для отведения избыточного тепла. Результаты численного моделирования транзистора с высокой подвижностью электронов на основе нитрида галлия с теплоотводящим элементом на основе нитрида бора указывают на улучшение электрических, частотных и переходных характеристик, увеличение напряжения пробоя. В случае сапфировой подложки максимальная температура в структуре прибора, работающего на уровне 3,3 Вт/мм, снижается на 82,4 °С, при этом напряжение пробоя, рассчитанное при напряжении затвор-исток 2 В, повышается на 357 В. Граничная частота и максимальная частота генерации, определенные при напряжении затвор-исток 6 В и напряжении сток-исток 30 В, увеличиваются в 1,38 и 1,49 раз, соответственно. Предлагаемое конструктивно-технологическое решение может использоваться и для других мощных приборов.

A local thermal management solution for high electron mobility transistors based on GaN was developed using a BN layer as a heat-spreading element. The thermally conducting and electrically insulating nature of BN allows it to be placed close to the active area and to be in direct contact with the electrodes and the heat sink, thus introducing an additional heat-escaping route. The numerical simulations of a GaN high electron mobility transistor with the BN heat-spreading element revealed the improvement in the DC, breakdown, small-signal AC and transient characteristics. In case of sapphire substrate, the maximum temperature in the device structure operating at a power density of 3.3 W/mm was reduced by 82.4 °C, while the breakdown voltage at a gate-source voltage of 2 V was increased by 357 V. The cut-off frequency and the maximum oscillation frequency at a gate-source voltage of 6 V and a drain-source voltage of 30 V were enhanced by 1.38 and 1.49 times, respectively. We suppose that the proposed thermal management method can be adapted to other high-power devices.

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The authors declare that there are no conflicts of interest present.