vestiftИзвестия Национальной академии наук Беларуси. Серия физико-технических наукProceedings of the National Academy of Sciences of Belarus. Physical-technical series1561-83582524-244XThe Republican Unitary Enterprise Publishing House "Belaruskaya Navuka"10.29235/1561-8358-2026-71-3-243-254vestift-956Research ArticleРАДИОЭЛЕКТРОНИКА И ПРИБОРОСТРОЕНИЕRADIOELECTRONICS AND INSTRUMENT-MAKINGПолупроводниковые соединения Сu2CoGeS4, Cu2CoGeSe4, Cu2CoSnS4, Cu2CoSnSe4: синтез, структурные, термоэлектрические свойстваSemiconducting compounds Сu2CoGeS4, Cu2CoGeSe4, Cu2CoSnS4, Cu2CoSnSe4: synthesis, structural, and thermoelectric propertieshttps://orcid.org/0000-0002-5351-9397ХорошкоВ. В.KhoroshkoV. V.

Хорошко Виталий Викторович – кандидат технических наук, доцент, заведующий кафедрой проектирования информационно-компьютерных систем

ул. П. Бровки 6, 22013, Минск

Vitaly V. Khoroshko – Cand. Sci. (Engineering), Associate Professor, Head of the Depart- ment of Information and Computer Systems Design

6, Р. Brovkа St., 220013, Minsk

khoroshko@bsuir.byhttps://orcid.org/0000-0003-2205-3042МигалевичС. А.MigalevichS. A.

Мигалевич Сергей Александрович – старший преподаватель, начальник Центра информатизации и инновационных разработок 

ул. П. Бровки 6, 22013, Минск

Sergey A. Migalevich – Senior Lecturer, Head of the Center for Engineering and Innovative Development

6, Р. Brovkа St., 220013, Minsk

migalevich@bsuir.byЛоскоЕ. В.LoskoE. V.

Лоско Елена Владимировна – инженер; аспирант 

ул. П. Бровки 6, 22013, Минск

ул. М. Богдановича, 155, 220040,  Минск

Elena V. Losko – Engineer; Postgraduate Student

6, Р. Brovkа St., 220013, Minsk

155, M. Bogdanovicha St., 220040, Minsk

elosko17@gmail.comhttps://orcid.org/0009-0002-2733-1574ОсмоловскаяТ. Н.OsmolovskayaT. N.

Осмоловская Татьяна Николаевна – младший научный сотрудник научно-исследовательской лаборатории 2.2. «Импульсный электролиз и многокомпонентные материалы»; аспирант 

ул. П. Бровки 6, 22013, Минск

ул. П. Бровки 19, 220072, Минск

Tatyana N. Osmolovskaya – Junior Researcher of the Research Laboratory 2.2 “Pulse Electrolysis and Multicomponent Materials”; Postgraduate Student

6, Р. Brovkа St., 220013, Minsk

19, P. Brovka St., 220072, Minsk

otn@bsuir.byhttps://orcid.org/0000-0002-3442-5299ГременокВ. Ф.GremenokV. F.

Гременок Валерий Феликсович – доктор физико-математических наук, профессор, заведующий лабораторией физики полупроводников 

ул. П. Бровки 6, 22013, Минск

ул. П. Бровки 19, 220072, Минск

Valery F. Gremenok – Dr. Sci. (Physics and Mathematics), Professor, Head of the Laboratory of Semiconductor Physics at Scientific-Practical Materials

6, Р. Brovkа St., 220013, Minsk

19, P. Brovka St., 220072, Minsk

gremenok@physics.byhttps://orcid.org/0000-0002-9903-5531КузьмарИ. И.KuzmarI. I.

Кузьмар Инна Иосифовна – кандидат технических наук, доцент, заведующий научно-исследовательской лабораторией 2.2. «Импульсный электролиз и многокомпонентные материалы»

ул. П. Бровки 6, 22013, Минск

Inna I. Kuzmar – Cand. Sci. (Engineering), Associate Professor, Head of the Research La bo ratory 2.2 “Pulse Electrolysis and Multicomponent Materials”\6, Р. Brovkа St., 220013, Minsk

kuzmar@bsuir.byhttps://orcid.org/0000-0001-8222-8030СтанчикА. В.StanchikA. V.

Станчик Алена Викторовна – кандидат физико-математических наук, доцент, ведущий научный сотрудник

ул. П. Бровки 19, 220072, Минск

Aliona V. Stanchik – Cand. Sci. (Physics and Mathematics), Associate Professor, Leading Researcher

19, P. Brovka St., 220072, Minsk

stanchik@physics.byБелорусский государственный университет информатики и радиоэлектроникиБеларусьBelarusian State University of Informatics and RadioelectronicsBelarusБелорусский государственный университет информатики и радиоэлектроники; ОАО «НИИЭВМ»БеларусьBelarusian State University of Informatics and Radioelectronics; ОJSС “NIIEVM”BelarusБелорусский государственный университет информатики и радиоэлектроники; ГО «Научно-практический центр Национальной академии наук Беларуси по материаловедению»БеларусьBelarusian State University of Informatics and Radioelectronics; Scientific and Practical Material Research Center of the National Academy of Sciences of BelarusBelarusГО «Научно-практический центр Национальной академии наук Беларуси по материаловедению»БеларусьScientific and Practical Material Research Center of the National Academy of Sciences of BelarusBelarus202629092026713243254Copyright © Хорошко В.В., Мигалевич С.А., Лоско Е.В., Осмоловская Т.Н., Гременок В.Ф., Кузьмар И.И., Станчик А.В., 20262026Хорошко В.В., Мигалевич С.А., Лоско Е.В., Осмоловская Т.Н., Гременок В.Ф., Кузьмар И.И., Станчик А.В.Khoroshko V.V., Migalevich S.A., Losko E.V., Osmolovskaya T.N., Gremenok V.F., Kuzmar I.I., Stanchik A.V.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://vestift.belnauka.by/jour/article/view/956

Представлены результаты синтеза поликристаллических образцов соединений Сu2CoGeS4, Cu2CoGeSe4, Cu2CoSnS4, Cu2CoSnSe4 и исследования их структурных и термоэлектрических свойств. Для каждого образца определены параметры элементарной ячейки, температура плавления, рассчитаны скорость звука, рентгеновская плотность и температура Дебая. Установлено, что соединения Сu2CoGeS4, Cu2CoSnS4, Cu2CoSnSe4 кристаллизуются в тетрагональной структуре станнита с соотношением a/c ~ 2; Cu2CoGeSe4 – в орторомбической структуре. Термоэлектрические свойства исследованных соединений закономерно изменяются в температурном диапазоне 298–523 К. Коэффициент Зеебека возрастает с температурой для всех соединений, при этом минимальные значения в ряду демонстрирует Cu2CoSnSe4 (135 → 195 мкВ/К), максимальные − Cu2CoGeS4 и Cu2CoSnS4 (307 → 384 мкВ/К соответственно). Удельное электросопротивление монотонно снижается: от 0,92 (Cu2CoSnSe4) − 3,41 (Cu2CoSnS4) Ом · см при 298 К до 0,13 (Cu2CoSnSe4) − 0,35 (Cu2CoSnS4) Ом · см при 523 К. Теплопроводность изменяется с 2,12 (Cu2CoGeSe4) по 3,50 (Cu2CoSnS4) Вт/(м · К) при 298 К и 1,80 (Cu2CoGeSe4) − 3,70 (Cu2CoGeS4) Вт/(м · К) при 523 К. Высокие значения коэффициента Зеебека, низкое электросопротивление и теплопроводность при повышенных температурах указывают на перспективность данных соединений для применения в термоэлектрических преобразователях. Соединения Сu2CoGeS4, Cu2CoGeSe4, Cu2CoSnS4, Cu2CoSnSe4 состоят из нетоксичных и широкодоступных элементов, что отвечает современным требованиям к экологичности термоэлектрических материалов и открывает возможности для их практического использования в термоэлектрических устройствах.

In this paper we report on the synthesis of polycrystalline Cu2CoGeS4, Cu2CoGeSe4, Cu2CoSnS4, and Cu2CoSnSe4 compounds and the investigation of their structural and thermoelectric properties. For each sample, the unit cell parameters and melting temperature were determined, and the sound velocity, X-ray density, and Debye temperature were calculated. Cu2CoGeS4, Cu2CoSnS4, Cu2CoSnSe4 crystallize in a tetragonal stannite structure (a/c ≈ 2), Cu2CoGeSe4 exhibits an orthorhombic structure. The thermoelectric properties of the compounds researched change in a predictable manner over the range 298–523 K. The Seebeck coefficient increases with temperature for all compounds; Cu2CoSnSe4 exhibits the lowest values in the series (135→195 µV/K), whilst Cu2CoGeS4 and Cu2CoSnS4 exhibit the highest (307→384 µV/K, respectively). The specific electrical resistivity decreases monotonically: from 0.92 (Cu2CoSnSe4) to 3.41 (Cu2CoSnS4) Ω · cm at 298 K to 0.13 (Cu2CoSnSe4) − 0.35 (Cu2CoSnS4) Ω · cm at 523 K. Thermal conductivity varies from 2.12 (Cu2CoGeSe4) to 3.50 (Cu2CoSnS4) W/(m · K) at 298 K and 1.80 (Cu2CoGeSe4) − 3.70 (Cu2CoGeS4) W/(m · K) at 523 K. The high Seebeck coefficient values combined with low electrical resistivity at elevated temperatures indicate the potential of these compounds for thermoelectric converter applications. The compounds Cu2CoGeS4, Cu2CoGeSe4, Cu2CoSnS4, and Cu2CoSnSe4 consist of non-toxic and earth-abundant elements, which meets modern eco-friendliness requirements for thermoelectric materials and opens up possibilities for their practical use in thermoelectric devices.

четверные полупроводниковые соединенияРамановская спектроскопиякристаллическая структуратермоэлектрические свойстватермоэлектрические материалыquaternary semiconductor compoundsRaman spectroscopycrystal structurethermoelectric propertiesthermoelectric materialsработа выполнена в рамках проекта Белорусского республиканского фонда фундаментальных исследований Т25-056 «Получение полупроводниковых материалов Cu2Co(Sn,Ge)(S,Se)4 и исследование их физических свойств» и в рамках Государственной программы научных исследований «Современное материаловедение, перспективные материалы и новые технологии» на 2026–2030 годы.this work was carried out within the framework of the project T25-056 “Synthesis of Cu2Co(Sn,Ge)(S,Se)4 semiconductor materials and investigation of their physical properties” of the Belarusian Republican Foundation for Fundamental Research, and by the State Research Program “Advanced Materials Science, Promising Materials and New Technologies” for 2026–2030.ReferencesResearch Progress of Thermoelectric Materials – A Review / Jun Wang, Yonggao Yin, Chunwen Che, Mengying Cui // Energies. – 2025. – Vol. 18. – Art. 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The authors declare that there are no conflicts of interest present.