Simulation of influence of epitaxial film type on electrical characteristics of high-voltage silicon diodes

Abstract

The device-process simulation of the high-voltage silicon diode was performed at its forming in three types of epitaxial film: 1) 17.0SEPh2.0 (silicon doped phosphor of electron type conductivity with the thickness d = 17 μm and resistivity of p_v = 2.0 Ohm^.sm); 2) 25.0SEPh6.0 (d = 25.0 μm, p_v = 6.0 Ohm^.sm); 3) 25.0SEPh20.0 (d = 25.0 μm, p_v = 20.0 Ohm^.sm). Technological process parameters of diode structure making were defined and its design data was calculated for three types of epitaxial film, the comparison of calculated values with typical ones obtained experimentally was carried out. It was determined that the difference between calculated values and typical ones obtained by experiment is not more then ±10%. The device modeling of diode was performed and it was investigated how the thickness and resistivity of epitaxial film influence on structural and electrical features of diode.