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Proceedings of the National Academy of Sciences of Belarus. Physical-technical series

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PHYSICO-CHEMICAL PROPERTIES OF ULTRADISPERSED POWDERS OF SILICON

https://doi.org/10.29235/1561-8358-2018-63-1-15-19

Abstract

Experimental investigations of ultradispersed silicon powder produced by mechanical grinding are conducted. The process of scaling powders using mechanochemical grinding was studied. It was found that the dimension of crystallites of the silicon powder determines their physical and chemical properties. Finely divided powders of silicon with a particle size ≤10 nm easily decompose water at room temperature into hydrogen and oxygen, they are easily oxidized by air oxygen and actively interact with hydroxides and acids with the release of significant amount of heat. The rate of saturation of micro- and ultradispersed powders with hydrogen at a constant rate of flow in the flow system depends on the temperature of the hydrogen hydrogenation process. It was found that the hydride formed at a low temperature (≤573 K) is in an equilibrium state when it is being hydrogenated in a flow reactor. The treated powder passes into a metastable state with the termination of the thermal action after hydrogenation. Hydrogen, entering the volume of micro- and ultradispersed silicon powder in the temperature range 373–723 K due to the diffusion process, can react not only with silicon atoms to form hydrides of the SiH2 type, but also with hydrides of less active radicals of the type of Si2H4, Si2H6. The hydrogenation process has two distinct stages. It is shown that the temperature of the transition between the stages is determined by the dispersion of micro- and ultradispersed silicon powders and by the structure of hydrides on the particle surface. As a result, it is established that the optimum temperature of hydrogenation should be taken at a temperature of 623 K, at which the maximum mobility of silicon atoms is reached during the formation of hydride. Sharp decrease in the hydrogen content is observed at a temperature above 723 K for the Si2H4 (SiH2).

About the Authors

A. A. Kovalevskii
Belarussian State University of Informatics and Radioelectronics, Minsk
Belarus
Ph. D. (Engineering), Assistant Professor, Leading Researcher of the Center 4.13


D. A. Kotov
Belarussian State University of Informatics and Radioelectronics, Minsk
Belarus
Ph. D. (Engineering), Assistant Professor of the Department of Micro- and Nanoelectronics, Director of the Center 4.13


S. V. Granko
Belarussian State University of Informatics and Radioelectronics, Minsk
Belarus
Ph. D. (Engineering), Assistant Professor of the Department of Micro- and Nanoelectronics, Dean of the Faculty of Radio Engineering and Electronics


O. M. Chernausik
Belarussian State University of Informatics and Radioelectronics, Minsk
Belarus
Master of Engineering, Researcher of the Center 4.13


K. A. Korzun
Belarussian State University of Informatics and Radioelectronics, Minsk
Belarus
Master of Engineering, Researcher of the Center 4.13


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ISSN 1561-8358 (Print)
ISSN 2524-244X (Online)