Multilayered conductive films of semiconductor devices and integrated circuits
https://doi.org/10.29235/1561-8358-2020-65-2-170-176
Abstract
The stress-migration phenomenon in films of alloy Al–Si which is observed at a current of high density (an order 105 А/mm2) is investigated. By results of researches the technical decision which allows quality raise of obtained film structures is offered. Its essence consists in formation in films the traps for migrating atoms of aluminium at course of a current of high density at the expense of formation the passive layer of TiN on the metal layer surface, for example, Al–1,5 %Si. In the presence of advanced relief of a surface of modern integrated circuits, for example with sub-micron sizes of the topology elements, the thickness and structure of metal current-carrying films on relief steps differs from what are located on planar sites. It leads to occurrence of essential gradients of mechanical pressure which are stress-migration motive power. As it is known, that temperature factor of linear expansion of aluminium is approximately 20 times, than SiO2, that causes active generation of dot defects in a layer of the alloy on the base of aluminium which is much more plastic than SiO2. Under the influence of a gradient of residual pressure, dot defects, existed in films, for example vacancies, come to movement mainly on border of metal - dielectric and in due course under the influence of a current of high density lead to formation of group defects in an alloy film, in particular emptiness, hills etc. Since stress-migration processes on these sites occur most intensively, as a result there is a rupture of films mainly on steps of a topological relief. Results of the research have passed approbation and can be used at manufacturing of silicon semi-conductor devices and integrated microcircuits.
About the Authors
V. A. Emelyanov
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Viktor A. Emelyanov – Сorresponding Member of the National Academy of Science, D. Sc. (Engineering), Professor
6, Brovka Str., 220013, Minsk
V. V. Baranov
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Valentin V. Baranov – D. Sc. (Engineering), Professor
6, Brovka Str., 220013, Minsk
V. V. Emelyanov
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Viktor V. Emelyanov – Magister
6, Brovka Str., 220013, Minsk
References
1. Baranov V. V. Solid state devices, testing, measuring. Biomedical diagnostic technologies. Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki = Doklady BGUIR, 2014, no. 2 (80), pp. 23–31 (in Russian).
2. Emel’yanov V. A., Baranov V. V., Emel’yanov F. V. Evolution of VLSIs Materials and Packaging Technology Correlated with Progress of Thin Films Deposition and Outlets Bonding Methods. Proceedings of the 2nd Electronics SystemIntegration Technology Conference – ESTC-2008. London, 2008. Pp. 779–783. https://doi.org/10.1109/estc.2008.4684450
3. Koleshko V. M., Belitskii V. F. Thin-film mass transfer. Minsk, Nauka i tekhnika Publ., 1980. 296 p. (in Russian).
4. Emel’yanov V. A., Baranov V. V. (ed.). Technology of micromontage of integrated circuits. Minsk, Belaruskaya navuka Publ., 2002. 335 p. (inRussian).
5. Dostanko A. P., Baranov V. V., Solov’ev Ya. A. Residual stress distribution in thin films. Doklady Natsional’noi akademii nauk Belarusi = Doklady of the National Academy of Sciences of Belarus, 2002, vol. 46, no. 4, pp. 119–122 (in Russian).
6. Baranov V. V. Power Electronics Products, Sensors, Biomedical Technologies. Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki = Doklady BGUIR, 2019, no. 3 (121), pp. 70–75 (in Russian).
7. Dostanko A. P., Baranov V. V., Shatalov V. V. VLSI Film Conductive Systems. Minsk, Vysshaya shkola Publ., 1989. 238 p. (in Russian).
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