Formation of a membrane layer with silicon carbide on an aluminosilicate substrate

The paper presents the results of a study of the formation features on a large-pore substrate of a SiC-containing layer of pre-processed in a bead mill products of grinding porcelain fight with anthracite (10 wt.%). It is shown that the alloying of aluminosilicate powder with carbon leads to the formation of cubic and hexagonal silicon carbide (moissanite) in the sintered material. The main source of silicon for the formation of SiC when sintering doped powder Al₂O₃−SiO₂, is quartz. The process of SIC formation at temperatures of 850−950 °C becomes possible due to the formation of structural defects on the surface and in the volume of mechanically activated porcelain particles; partial transition to a more active, amorphous state of brittle SiO₂ (always present as grains in the structure of milled aluminosilicate particles) when doped with carbon. The process of manufacturing multilayer tube samples included pressing and sintering of a large-pore aluminosilicate substrate at a temperature of 1200–1250 °C with successive application and heat treatment of the intermediate and membrane layers. It was found that at 950 °C, the formation of a membrane layer from a mechanically activated Al₂O₃−SiO₂–C powder with a particle size of less than 1 µm is accompanied by the formation of SIC in an amount of 36 %. The structural and filtering characteristics of the obtained three-layer tubular samples with A SIC-containing membrane layer were determined: the pore size of 0.4−0.5 microns; water capacity of 0.012 m³ /m²  ∙ s; the degree of retention of particles smaller than 0.5 microns, including microorganisms, − 100 %. It is shown experimentally that three-layer samples are characterized by an almost constant filter cycle during filtration.

aluminosilicate ceramics, silicon carbide, membrane layer, large-porous substrate, characteristics

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