Formation of a stable defects structure in silicon noise diodes

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The possibilities and methods of creating a stable defective structure, including dislocation structure near the zones of p–n-transitions of silicon diodes of noise generators on plates with crystallographic orientations (111) and (001) have been investigated. The effective distribution control of uncontrolled impurities in monocrystalline silicon is achieved by forming a stable dislocation structure in its volume. In order to obtain the reproducible characteristics of noise generator diodes, it is necessary that the dislocation density be homogeneous throughout the plate area. Since the density of dislocations is slightly lower at the edge of the dislocation trail than in the middle, this means that the dislocation traces formed by the adjacent melting zones with the help of a laser beam should overlap. On the basis of experimental studies, it has been established that the necessary degree of uniformity of the density of defects generated is achieved by compliance with the condition of a = (1.5–5.0)d, where a is a step, d is a width of the laser spot on the wafer. The melting process was carried out in a nitrogen environment using a laser hettering unit. The real width of the melting zone turns out to be slightly larger than the diameter of the laser spot due to the thermal conductivity of the silicon and is about 10 μm. Increased dislocation generation on the Si3N4 inclusions, as opposed to dislocations on the Si–SiO2 border, leads to an additional expansion of the dislocation track at the work surface of the plate of noise diodes. The presence of the stable dislocation structure, as well as the presence of impurities and secondary metal atoms in the noise diodes ND 103L structure are confirmed by the secondary ion mass spectroscopy (SIMS) method. The results of the study have been tested at Corporation “INTEGRAL” (Belarus) and can be used in the manufacture of silicon noise diodes.

1. Baranov V. V. Solid state devices, testing, measuring. Biomedical diagnostic technologies. Doklady BGUIR, 2014, no. 2 (80), pp. 23–31 (in Russian).

2. Nyamhere C., Scheinemann A., Schenk A., Scheit A., Olivie F., Cristiano F. A comprehensive studyof the impact of dislocation loops on leakage currents in Si shallow junction devices. Journal of Applied Physics, 2015, vol. 118, pp. 184501. http://doi.org/10.1063/1.4935293

3. Vasil’еv Yu. B., Verezub N. A., Mezhennyi M. V., Prosolovich V. S., Prostomolotov A. I., Reznik V. Ya. Features of defect formation under the thermal treatment of dislocation-free single-crystal large-diameter silicon wafers with the specified distribu-tion of oxygen-containing gettering centers in the bulk. Russian Microelectronics, 2013, vol. 42, no. 8, pp. 467–476. http://doi.org/10.1134/S1063739713080155

4. Emel’yanov V. A., Baranov V. V., Emel’yanov F. V. Evolution of VLSIs Materials and Packaging Technology Correlated with Progress of Thin Films Deposition and Outlets Bonding Methods. Proceedings of the 2nd Electronics System-Integration Technology Conference – ESTC-2008. London, 2008, pp. 779–783. https://doi.org/10.1109/estc.2008.4684450

5. Emel’yanov V. A., Baranov V. V. (ed.). Technology of Micromontage of Integrated Circuits. Minsk, Belaruskaya navuka Publ., 2002. 335 p. (in Russian).

6. Dostanko A. P., Baranov V. V., Solov’ev Ya. A. Residual stress distribution in thin films. Doklady Natsional’noi akademii nauk Belarusi = Doklady of the National Academy of Sciences of Belarus, 2002, vol. 46, no. 4, pp. 119–122 (in Russian).

7. Baranov V. V. Power Electronics Products, Sensors, Biomedical Technologies. Doklady BGUIR, 2019, no. 3 (121), pp. 70–75 (in Russian).

8. Dostanko A. P., Baranov V. V., Shatalov V. V. VLSI Film Conductive Systems. Minsk, Vysshaya shkola Publ., 1989. 238 p. (in Russian).

9. Kisly P. S. Silicon Nitride. Chemical Encyclopaedia. Vol. 2. Moscow, Soviet encyclopaedia Publ., 1990, pp. 519 (in Russian).

10. Milvidski M. G. Silicon. Chemical Encyclopaedia. Vol. 2. Moscow, Soviet encyclopaedia Publ., 1990, pp. 508–509 (in Russian).

11. Buslyuk V. V., Odzhaev V. B., Panfilenko A. K., Petlitskii A. N., Prosolovich V. S., Filipenya V. A., Yankovskii Yu. N. Physical Parameters of the Broadband Noise-Generator Diodes. Russian Microelectronics, 2020, vol. 49, no. 4, pp. 295–301 (in Russian). http://doi.org/10.1134/S1063739720040034