Influence of high temperature thermal annealing on the structure, phase composition and resistive properties of films obtained by magnetron sputtering of a target of composition MoSi2 + 20 wt.% SiC
https://doi.org/10.29235/1561-8358-2026-71-1-31-38
Abstract
Thin films with a quasi-amorphous finely dispersed structure and a crystallite size of 1–3 nm were obtained using the magnetron sputtering method of a composite target of MoSi2 + 20 wt.% SiC compound. A study was conducted on the influence of temperature and duration of annealing on the surface electrical resistance, structure and phase composition of these films, which made it possible to establish a relationship between the structural-phase state and the value – of the surface resistance of the films. It was determined that annealing of freshly deposited films at a temperature above 700 °C leads to a decrease in their surface resistance by 2.5–3 times, and at a heat treatment temperature of 900 °C this characteristic is stabilized. Based on the results of electron diffraction analysis and resistive properties of the films, it was found that the change in surface electrical resistance is due to the evolution of the structure from quasi-amorphous to polycrystalline. It was shown that the formation of stable phases of MoSi2 and Mo5Si3 of the tetragonal modification, as well as SiC of the hexagonal modification after heat treatment ensures stabilization of the electrical properties of the films. It was found that the a temperature of 900 °C and a heat treatment duration of 3 hours can be considered as optimal annealing modes, at which stabilization of the surface resistance, structure and phase composition of the films can be achieved. The results obtained can be used to produce highly efficient thin-film IR emitters used as light sources in gas microanalyzers.
Keywords
About the Authors
I. M. RomanovRussian Federation
Igor M. Romanov – Cand. Sci. (Physics and Mathematics), Senior Researcher of the Laboratory of Vacuum Plasma Coatings at Рhysical-Technical Institute
10, Academician Kuprevich St., 220141, Minsk
S. D. Latushkina
Russian Federation
Svetlana D. Latushkina – Cand. Sci. (Engineering), Associate Professor, Нead of the Vacuum Plasma Coatings Laboratory at Рhysical-Technical Institute
10, Academician Kuprevich St., 220141, Minsk
E. N. Shcherbakova
Belarus
Elena N. Shcherbakova – Cand. Sci. (Physics and Mathematics), Associate Professor, Responsible for educational and methodological work at Instrument-Making Faculty
65, Nezavisimosti Ave., 220013, Minsk
O. I. Posylкina
Belarus
Olga I. Posylкina – Cand. Sci. (Engineering), Senior Researcher of the Laboratory of Vacuum Plasma Coatings at Рhysical-Technical Institute
10, Academician Kuprevich St., 220141, Minsk
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