ELECTROCHEMICAL DEPOSED BISMUTH COATINGS AND THE EFFICIENCY OF THEIR PROTECTION FROM ELECTRON IRRADIATION

Microelectronic products are widely used in aerospace, aviation, military and nuclear engineering. However, they are very sensitive to various ionizing radiations (electrons, protons, heavy charged particles, X-ray and gamma radiation). The common used material for radiation protection is lead. In recent years, bismuth deposition has become an interesting subject for the electrochemical community because of bismuth’s unique electrical, physical and chemical properties. There is a limited number of authors dealing with continuous bismuth films onto metallic substrates by electrodeposition. The conditions of electrochemical deposition of bismuth and the structure of coatings were examined. Electrochemical deposition with the inputted various organic additives and without them was carried out. It is shown that bismuth coatings have a rhombohedral lattice, and thаt adding of a number of organic additives into the electrolyte results changing in a coatings growth texture. The protection efficiency of shields based on bismuth under 1.6–1.8 MeV electron irradiation energy was measured. The electron beam attenuation efficiency was estimated by changing of current-voltage characteristics of semiconductor test structures which were located behind the shields and without them. It has been determined that bismuth shields with 2 g/cm2 reduced thickness and attenuation coefficient of 156 have optimal protection effectiveness and mass dimensional parameters.

electrochemical deposition, shielding, radiation protection, bismuth, electron irradiation

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