Use of silicon photomultipliers in near-infractory visualizers

The feasibility of using silicon photomultipliers (SiPMs) in a visualizer for determining infrared laser power was  assessed. The  study subjects  were  the  ON  Semi FC  30035  p⁺–p–n⁺  silicon  photomultipliers  (SiPMs)  manufactured in the USA. Such a device has a photosensitive surface area sufficient to match the surface area of the visualizer, which contains the phosphor. Phosphor-coated films were created for the study at the Optics, Optoelectronics, and Laser Engineering State Scientific Research Institute. The study demonstrated uniformity of the silicon photomultiplier sensitivity across the entire photosensitive surface of the photodetector. It was demonstrated that the use of phosphors in conjunction with SiPMs allows for expanding the spectral sensitivity of the silicon photodetector to wavelengths of 1490 and 1550 nm infrared radiation. It was found that the maximum signal-to-noise ratio can be achieved with SiPM supply voltages corresponding to its breakdown voltage for the visualizer when applying infrared radiation with wavelengths of 980, 1490, and 1550 nm. The feasibility of using silicon photomultipliers in the visualizer to determine the infrared radiation power is demonstrated. 

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