Полупроводниковые соединения Сu₂CoGeS₄, Cu₂CoGeSe₄, Cu₂CoSnS₄, Cu₂CoSnSe₄: синтез, структурные, термоэлектрические свойства

Представлены результаты синтеза поликристаллических образцов соединений Сu₂CoGeS₄, Cu₂CoGeSe₄, Cu₂CoSnS₄, Cu₂CoSnSe₄ и исследования их структурных и термоэлектрических свойств. Для каждого образца определены параметры элементарной ячейки, температура плавления, рассчитаны скорость звука, рентгеновская плотность и температура Дебая. Установлено, что соединения Сu₂CoGeS₄, Cu₂CoSnS₄, Cu₂CoSnSe₄ кристаллизуются в тетрагональной структуре станнита с соотношением a/c ~ 2; Cu₂CoGeSe₄ – в орторомбической структуре. Термоэлектрические свойства исследованных соединений закономерно изменяются в температурном диапазоне 298–523 К. Коэффициент Зеебека возрастает с температурой для всех соединений, при этом минимальные значения в ряду демонстрирует Cu₂CoSnSe₄ (135 → 195 мкВ/К), максимальные − Cu₂CoGeS₄ и Cu₂CoSnS₄ (307 → 384 мкВ/К соответственно). Удельное электросопротивление монотонно снижается: от 0,92 (Cu₂CoSnSe₄) − 3,41 (Cu₂CoSnS₄) Ом · см при 298 К до 0,13 (Cu₂CoSnSe₄) − 0,35 (Cu₂CoSnS₄) Ом · см при 523 К. Теплопроводность изменяется с 2,12 (Cu₂CoGeSe₄) по 3,50 (Cu₂CoSnS₄) Вт/(м · К) при 298 К и 1,80 (Cu₂CoGeSe₄) − 3,70 (Cu₂CoGeS₄) Вт/(м · К) при 523 К. Высокие значения коэффициента Зеебека, низкое электросопротивление и теплопроводность при повышенных температурах указывают на перспективность данных соединений для применения в термоэлектрических преобразователях. Соединения Сu₂CoGeS₄, Cu₂CoGeSe₄, Cu₂CoSnS₄, Cu₂CoSnSe₄ состоят из нетоксичных и широкодоступных элементов, что отвечает современным требованиям к экологичности термоэлектрических материалов и открывает возможности для их практического использования в термоэлектрических устройствах.

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